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STB80NF10T4

Part No STB80NF10T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 182nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031089-STB80NF10T4
Family Name STB80NF10
Introduction Date April 01, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB80NF10T4 CAD Model

Description

STB80NF10T4 - N-Channel 100V - 0.0095 Ohm - 80A - D2PAK STripFET™ II Power MOSFET

The STB80NF10T4 is a high-performance N-Channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is part of the STripFET™ II family, which is renowned for its low on-resistance and low gate charge, making it an ideal choice for high-frequency switching and power management tasks.

With a drain-source voltage (V<sub>DS) of 100V, the STB80NF10T4 is capable of handling high voltage operations while maintaining robustness and stability. Its low on-resistance of just 0.0095 Ohm minimizes conduction losses, which is crucial for improving the overall efficiency of the system it's integrated into. This feature, combined with a high current capability of 80A, makes the STB80NF10T4 suitable for demanding applications such as DC-DC converters, motor control circuits, and power management solutions.

The device is encapsulated in a D2PAK package, which not only ensures a compact footprint but also provides excellent thermal performance. The package is designed to handle high levels of heat dissipation, which is essential for maintaining performance and longevity when operating at high currents or in high-temperature environments.

Additionally, the STB80NF10T4 boasts a low gate charge (Q<sub>G), which enhances its switching performance. This characteristic is particularly important for applications that require fast switching frequencies, as it helps to reduce switching losses and improves the overall response time of the circuit.

STMicroelectronics has designed the STB80NF10T4 with a focus on reliability. It features an avalanche ruggedness that protects the device in adverse conditions, making it a reliable choice for industrial and automotive applications where durability is a prime concern.

In summary, the STB80NF10T4 from STMicroelectronics is a powerful and efficient N-Channel Power MOSFET that offers low on-resistance, high current capability, and excellent thermal performance, packaged in a space-saving D2PAK outline. Its robust design and fast switching capabilities make it a versatile component for a variety of high-performance power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3819 $55.2760
80+ $1.2945 $103.5600
120+ $1.2507 $150.0840
175+ $1.1633 $203.5775
225+ $1.1195 $251.8875
280+ $1.0758 $301.2240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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