The STD110NH02LT4 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is renowned for its advanced semiconductor solutions. This component is a part of the STripFET™ II family that is characterized by an optimal trade-off between on-resistance and gate charge, making it an efficient choice for a wide array of power applications.

Key Features

• Low Threshold Drive: It operates at a low gate threshold voltage, which makes it suitable for low-voltage drive applications and ensures ease of interfacing with logic-level devices.
• High Current Capability: With a continuous drain current of 80 A, the STD110NH02LT4 can handle high current loads, making it ideal for high-power applications.
• Low On-resistance: The on-resistance of only 3.7 mΩ minimizes conduction losses and enhances overall efficiency, which is crucial for power-sensitive designs.
• 100% Avalanche Tested: This feature ensures the device's reliability and robustness in applications where the MOSFET may experience high energy pulses.
• Exceptional Ruggedness: The device is designed to withstand harsh conditions, making it suitable for automotive and industrial applications.

Applications

The STD110NH02LT4 is versatile and can be used in a wide range of applications. Its high efficiency and power handling capabilities make it particularly suitable for:

• Switching regulators
• DC-DC converters
• Motor drivers
• Power management in portable and battery-powered devices
• Automotive applications

Package Information

This Power MOSFET is housed in a DPAK (TO-252) package, which is designed for compact surface mount installations. The package is optimized for improved thermal performance and reduced footprint on the PCB.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STD110NH02LT4 is manufactured with rigorous standards, ensuring high reliability and performance consistency for the end-user's peace of mind.