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STD11N50M2

Part No STD11N50M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A DPAK / Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) DPAK T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 395pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 530 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1001053-STD11N50M2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD11N50M2
Introduction Date June 18, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2034
Ultra Librarian 3D Model Ultra Librarian STD11N50M2 CAD Model

Description

STD11N50M2 - Power MOSFET by STMicroelectronics

The STD11N50M2 is a high-performance Power MOSFET offered by STMicroelectronics, a leader in semiconductor solutions. This product is part of ST's MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high power density. The STD11N50M2 is specifically designed to address the demanding requirements of power supply applications and is a preferred choice for switch-mode power supplies (SMPS), lighting applications, DC-AC converters, and more.

Key Features

  • Voltage Rating: The device is rated for a drain-source voltage (V<sub>DS) of 500V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.38 ohms, the STD11N50M2 ensures minimal conduction losses and high efficiency.
  • Current Capacity: It can handle continuous drain current (I<sub>D) up to 11A, which is adequate for a wide range of power applications.
  • Fast Switching Speed: The device features a fast switching speed, which is essential for reducing switching losses in high-frequency operations.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) facilitates lower driving power and further enhances the efficiency of the overall system.

Applications

The STD11N50M2 is ideal for various power-related applications including:

  • High-efficiency switch-mode power supplies (SMPS)
  • LED lighting solutions
  • DC-DC converters
  • Power management systems
  • Adapters and chargers

Package and Quality

This MOSFET comes in a surface-mount DPAK package, which is known for its compact size and excellent thermal performance. The device is also RoHS compliant and meets the stringent quality standards set by STMicroelectronics, ensuring reliability and performance consistency.

In conclusion, the STD11N50M2 from STMicroelectronics is an outstanding choice for designers looking to optimize their power systems with a MOSFET that offers high voltage capability, low on-resistance, high current capacity, and fast switching performance. Its application versatility and commitment to quality make it a go-to component for power efficiency and density.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8626 $60.3820
165+ $0.7078 $116.7870
255+ $0.6858 $174.8790
350+ $0.6636 $232.2600
455+ $0.6415 $291.8825
605+ $0.5751 $347.9355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,814 pieces
In Stock: 9,800 pieces Factory Stock: 14 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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