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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 620pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031108-STD11N65M5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STD11N65M5
Introduction Date February 23, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian STD11N65M5 CAD Model

Description

Product Overview: STD11N65M5 - N-channel 650 V, 0.11 Ω typ., 10 A MDmesh™ M5 Power MOSFET in a DPAK package

STMicroelectronics, a global semiconductor leader, presents the STD11N65M5, a high-performance N-channel Power MOSFET that is part of the MDmesh™ M5 series. This device is optimized for high-efficiency power conversion applications, combining low on-resistance (R<sub>DS(on)) and fast switching performance with the robustness and reliability that ST is known for. The STD11N65M5 is housed in a surface-mount DPAK package, making it suitable for compact designs.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650 V, the STD11N65M5 can handle high voltage applications, making it ideal for primary side switching in SMPS (Switched-Mode Power Supplies), lighting, welding, solar inverters, and industrial applications.
  • Low On-Resistance: The device boasts an extremely low on-resistance of typically 0.11 Ω, which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • MDmesh™ M5 Technology: Utilizing ST's proprietary MDmesh™ M5 technology, the STD11N65M5 offers a perfect blend of low gate charge (Q<sub>g), low on-resistance, and high dv/dt capability, ensuring high switching performance with reduced switching losses.
  • Enhanced Power Density: The DPAK package enables a compact footprint and excellent power density, suitable for space-constrained applications.
  • High dv/dt Capability: The device is designed to withstand high voltage transients, ensuring reliability and longevity in demanding environments.
  • Zener-Protected: The MOSFET is equipped with an integrated Zener diode on the gate to provide protection against electrostatic discharge (ESD) and to enhance ruggedness.

Applications

The STD11N65M5 is versatile and can be used in a variety of applications that require high efficiency and power density. Typical applications include:

  • Switched-Mode Power Supplies (SMPS)
  • LED Lighting
  • Welding Equipment
  • Solar Inverters
  • Power Factor Correction (PFC) circuits
  • Industrial Power Supplies

With its advanced features and robust design, the STD11N65M5 from STMicroelectronics is an excellent choice for designers looking to enhance system reliability and efficiency in high-voltage power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7728 $53.1840
70+ $1.4546 $101.8220
110+ $1.4091 $155.0010
150+ $1.3637 $204.5550
190+ $1.3182 $250.4580
255+ $1.1819 $301.3845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 95,700 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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