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STD12N65M5

Part No STD12N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 900pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 4.3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102848-STD12N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD12N65M5 CAD Model

Description

STD12N65M5 - N-channel 650 V, 0.33 Ω typ., 10 A MDmesh™ M5 Power MOSFET in a DPAK package

The STD12N65M5 is a high-performance N-channel Power MOSFET from STMicroelectronics, renowned for its efficiency and reliability in a wide range of applications. This MOSFET is a part of the innovative MDmesh™ M5 series, which utilizes ST's proprietary super-junction technology that significantly reduces on-resistance and total power losses, making it an ideal choice for high-efficiency power conversion.

With a drain-source voltage (V<sub>DS) of 650 V, the STD12N65M5 is designed to handle high voltages, making it particularly suitable for applications such as switch-mode power supplies, LED lighting, welding, solar inverters, and other high-voltage switching applications. The device boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.33 Ω (typical), which translates to reduced conduction losses and improved overall efficiency.

This MOSFET can deliver a continuous drain current (I<sub>D) of up to 10 A, allowing for significant power handling capability. Additionally, the STD12N65M5 features a fast recovery diode, which is advantageous in applications where fast switching is crucial. The device also has a low gate charge (Q<sub>G), which minimizes the driving power required and further enhances its efficiency.

The STD12N65M5 comes in a rugged DPAK package, known for its compact footprint and excellent thermal performance. The package is designed to withstand harsh environments and is characterized by its high avalanche ruggedness, ensuring reliability and a long service life even under stressful conditions.

STMicroelectronics has also taken steps to ensure that the STD12N65M5 meets environmental standards. The device is compliant with RoHS and Halogen-free directives, making it an environmentally friendly choice for designers looking to create green products.

In summary, the STD12N65M5 from STMicroelectronics is a state-of-the-art Power MOSFET that offers high voltage capability, low on-resistance, high current handling, and fast switching performance, all packaged in a robust and compact DPAK package. It is an excellent choice for power conversion applications where efficiency and reliability are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2991 $59.7766
62+ $1.8866 $116.9692
95+ $1.8276 $173.6220
131+ $1.7687 $231.6997
169+ $1.7096 $288.9224
227+ $1.5328 $347.9456
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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