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STD12NF06-1

Part No STD12NF06-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1102849-STD12NF06-1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD12NF06-1 CAD Model

Description

STD12NF06-1 - N-Channel 60V - 0.08Ω - 12A - DPAK STripFET™ II Power MOSFET

The STD12NF06-1 is a high-performance N-Channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This device is a part of the STripFET™ II technology series, which is known for its low on-resistance and high switching performance. The STD12NF06-1 is designed to deliver efficient power management and is suitable for a wide range of applications, including DC-DC converters, motor control, and general-purpose switching.

Key Features:

  • Low Threshold Drive: The device features a low threshold voltage, making it compatible with low-voltage drive circuits and ensuring low on-state losses.
  • High Current Capability: With a continuous drain current of 12A, the STD12NF06-1 is capable of handling high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance: The on-resistance of just 0.08Ω minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive designs.
  • High Voltage Tolerance: With a drain-source voltage (Vds) of 60V, the MOSFET can be used in circuits that experience high voltage fluctuations without the risk of breakdown.
  • 100% Avalanche Tested: Ensures that the device can withstand high-energy pulses, providing robust performance and reliability.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control applications
  • Power management solutions
  • Automotive and industrial applications

The STD12NF06-1 comes in a DPAK (TO-252) package, which is suitable for compact designs and offers good thermal performance. This package is designed to optimize the thermal resistance and footprint, making it an excellent choice for space-constrained applications that require efficient heat dissipation.

STMicroelectronics has a reputation for producing reliable and high-quality components, and the STD12NF06-1 is no exception. It is designed to meet the stringent requirements of modern electronic circuits, providing designers with a robust and efficient power switching solution.

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