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STD13NM60N

Part No STD13NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 790pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031112-STD13NM60N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD13NM60N CAD Model

Description

Overview of STD13NM60N from STMicroelectronics

The STD13NM60N is a cutting-edge N-channel 600V Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This high-performance component is part of STMicroelectronics' MDmesh™ M6 series, which is known for its outstanding efficiency and thermal performance. The STD13NM60N is specifically engineered to address the demanding requirements of a wide range of power applications, including switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and power management solutions.

Key Features

  • High Voltage Capability: With a maximum drain-source voltage (V<sub>DS) of 600V, the STD13NM60N is well-suited for high-voltage applications, ensuring reliable operation even under stressful conditions.
  • Low On-Resistance: The device boasts an extremely low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: Its fast switching capabilities ensure minimal switching losses, making it ideal for high-frequency power switching applications.
  • Enhanced Power Density: The STD13NM60N's MDmesh™ M6 technology enables a high power density, allowing for more compact and lighter designs without compromising performance.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) minimizes the driving power required, contributing to the energy efficiency of the entire system.
  • 100% Avalanche Tested: This product is guaranteed to be avalanche tested, ensuring robustness and reliability in real-world applications.

Applications

The versatility of the STD13NM60N allows it to be utilized across various industries and applications. It is particularly effective in high-efficiency converters, including resonant converters, hard switching converters, and bridge topologies. Additionally, it is an excellent choice for power supplies in consumer electronics, telecommunication systems, and industrial equipment. Its robustness also makes it suitable for demanding environments, such as automotive applications and renewable energy systems.

Conclusion

The STD13NM60N from STMicroelectronics represents a blend of the latest semiconductor technology and design excellence. With its high voltage threshold, low on-resistance, and fast switching speeds, this Power MOSFET is an ideal solution for designers looking to enhance the efficiency and performance of their power management systems. Whether for SMPS, LED lighting, or advanced converters, the STD13NM60N is engineered to deliver top-notch performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2297 $55.3365
100+ $1.0090 $100.9000
155+ $0.9775 $151.5125
215+ $0.9459 $203.3685
275+ $0.9144 $251.4600
370+ $0.8198 $303.3260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,513 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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