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STD3NM60-1

Part No STD3NM60-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 324pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 066315-STD3NM60-1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD3NM60-1 CAD Model

Description

STD3NM60-1 - N-channel MOSFET by STMicroelectronics

The STD3NM60-1 is a cutting-edge N-channel, enhancement-mode Power MOSFET presented by STMicroelectronics, one of the leading manufacturers in the semiconductor industry. This device is meticulously designed to cater to a wide range of power applications, ensuring reliability and efficiency in performance.

Key Features

  • Low Threshold Drive: The device features a low threshold voltage, making it suitable for low voltage applications and ensuring ease of drive.
  • High Switching Speed: With its fast switching capabilities, the STD3NM60-1 enhances the performance of power management circuits, reducing losses and improving efficiency.
  • Improved Energy Efficiency: The MOSFET is designed to minimize on-state resistance (R<sub>DS(on)), which in turn reduces power dissipation and enhances overall energy efficiency.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to guarantee robustness and reliability in applications where the MOSFET is subjected to high-energy pulses.

Applications

The STD3NM60-1 is versatile and can be implemented in various applications including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control circuits
  • LED lighting solutions
  • Power management for computing and telecom systems

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 3A Power Dissipation (P<sub>D) 35W Operating Temperature Range -55°C to 150°C

Designed with the intent of offering a balance between performance and reliability, the STD3NM60-1 MOSFET from STMicroelectronics stands as a solid choice for designers looking to optimize their power circuitry across a multitude of applications.

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