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STD40N2LH5

Part No STD40N2LH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.3nC @ 5V
Max Input Capacitance 700pF @ 20V
Maximum Gate-Source Voltage ±22V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 11.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102887-STD40N2LH5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD40N2LH5 CAD Model

Description

STMicroelectronics STD40N2LH5 Power MOSFET

The STMicroelectronics STD40N2LH5 is a high-performance N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This device is part of STMicroelectronics' STripFET H5 series, which is known for its low on-state resistance and low gate charge, making it an excellent choice for power management tasks.

With a 40V drain-source breakdown voltage (V<sub>DS), the STD40N2LH5 is suitable for applications that require a moderate voltage range. It can handle continuous drain currents (I<sub>D) up to 80A, making it capable of supporting high current loads. The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, enhancing its compatibility with a broader range of drive circuits and controllers.

The STD40N2LH5 features an ultra-low on-state resistance (R<sub>DS(on)) of just 2.5 mΩ at a gate voltage of 10V. This characteristic minimizes conduction losses and helps improve the overall efficiency of the device in applications such as DC/DC converters, motor control circuits, and power management systems.

STMicroelectronics has packaged the STD40N2LH5 in a surface-mount DPAK (TO-252), which is widely used in the industry and allows for efficient thermal dissipation and space-saving on printed circuit boards. The device is also 100% avalanche tested, ensuring robustness and reliability under harsh operating conditions.

The STD40N2LH5 is designed with the environment in mind, as it is compliant with RoHS and Halogen-free requirements, making it a suitable choice for eco-friendly and energy-efficient designs. Its fast switching speed and low gate charge are beneficial for high-frequency circuits, reducing switching losses and improving performance.

In summary, the STD40N2LH5 from STMicroelectronics is a high-quality Power MOSFET that offers a balanced combination of low on-resistance, high current capability, and energy efficiency. It is an ideal component for designers looking to optimize their power management solutions in a variety of industrial, automotive, and consumer applications.

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