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STD4NK60ZT4

Part No STD4NK60ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031147-STD4NK60ZT4
Family Name STD4NK60
Introduction Date June 20, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD4NK60ZT4 CAD Model

Description

Product Overview: STD4NK60ZT4 - STMicroelectronics

The STD4NK60ZT4 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This device is part of their STripFET™ II series and is designed to deliver efficient power conversion in a wide array of electronic applications. With its advanced technology, the STD4NK60ZT4 offers an optimal balance of on-resistance, fast switching speed, and robust thermal performance, making it a preferred choice for designers and engineers.

Key Features

  • Low On-Resistance: The STD4NK60ZT4 boasts a low on-state resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency, especially beneficial in high current applications.
  • High Voltage Capability: With a drain-source voltage (VDSS) of 600V, this MOSFET can handle high voltage operations, making it suitable for use in power supply units and other high voltage circuits.
  • Improved Gate Charge: The device features an optimized gate charge (Qg), which enhances the switching performance, reducing switching losses and enabling faster operation in switching applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and durability in applications where the MOSFET is subject to high energy pulses.
  • Surface-Mount Package: The STD4NK60ZT4 is available in a DPAK (TO-252) surface-mount package, which is ideal for compact designs and allows for efficient heat dissipation.

Applications

The STD4NK60ZT4 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Motor Control Systems
  • LED Lighting Solutions
  • Power Management Functions

With its combination of high-voltage capability, low on-resistance, and fast switching speed, the STD4NK60ZT4 from STMicroelectronics is a solid choice for engineers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2535 $50.7000
485+ $0.2080 $100.8800
745+ $0.2015 $150.1175
1,030+ $0.1950 $200.8500
1,330+ $0.1885 $250.7050
1,780+ $0.1690 $300.8200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 205,800 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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