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STD55N4F5

Part No STD55N4F5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 55A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102899-STD55N4F5
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD55N4F5 CAD Model

Description

The STD55N4F5 is a high-performance Power MOSFET presented by STMicroelectronics, one of the leading manufacturers in the semiconductor industry. This component is designed to meet the demanding requirements of modern electronic circuits, offering a blend of low on-resistance and high switching speed, making it suitable for a variety of power applications.

Key Features

  • Low On-Resistance: The STD55N4F5 boasts an extremely low on-resistance (RDS(on)), which ensures minimal power loss during operation and enhances overall efficiency.
  • High Switching Speed: Fast switching capabilities allow for efficient operation at high frequencies, which is critical for applications such as DC/DC converters and motor control circuits.
  • Robust Thermal Performance: With an excellent thermal design, the STD55N4F5 can handle significant power and maintain stability even under challenging thermal conditions.
  • High Current Capacity: This MOSFET is capable of supporting high current flows, making it suitable for applications that require substantial power delivery.
  • Enhanced Durability: Constructed to withstand harsh environments, the STD55N4F5 is built to last and provide reliable performance over time.

Applications

The versatility of the STD55N4F5 allows it to be utilized in a wide range of applications, including:

  • Switching regulators
  • Power management solutions
  • Motor control systems
  • Automotive applications
  • High-efficiency DC/DC converters

Technical Specifications

  • Drain-source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 80A
  • Power Dissipation (PD): 110W
  • Operating Temperature Range: -55°C to 175°C

In conclusion, the STD55N4F5 Power MOSFET from STMicroelectronics is a high-quality component that offers a superior combination of power handling, efficiency, and reliability for advanced electronic applications. Its robust design and impressive technical specifications make it an excellent choice for designers looking to enhance the performance of their power systems.

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