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STD7N60M2

Part No STD7N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.8nC @ 10V
Max Input Capacitance 271pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1032314-STD7N60M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD7N60M2 CAD Model

Description

Product Overview: STD7N60M2 - STMicroelectronics

The STD7N60M2 is a high-performance N-channel 600V MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics. This advanced power MOSFET is engineered utilizing the company's innovative MDmesh™ technology, which combines a vertical structure with the company's proprietary strip layout to yield one of the industry's lowest on-resistance and gate charge. These features make the STD7N60M2 an ideal choice for a wide array of high-efficiency applications.

With a drain-source voltage (V<sub>DS) of 600V, the STD7N60M2 is tailored for high voltage operations, ensuring robust performance in environments where high voltage capability is paramount. The MOSFET's maximum continuous drain current (I<sub>D) is rated at 7A, providing substantial current handling capability for various power conversion applications.

One of the standout features of the STD7N60M2 is its low threshold voltage (V<sub>GS(th)), which enhances the device's ability to perform efficiently at low gate voltages, thereby reducing power losses and improving overall system efficiency. This characteristic is particularly beneficial in applications such as switch-mode power supplies, LED lighting, high-efficiency converters, and motor control circuits.

The device also exhibits an extremely low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and contributes to higher energy efficiency in electronic circuits. This low R<sub>DS(on) is a direct result of the MDmesh™ M2 technology, which optimizes the device for reduced switching losses without compromising on-state performance.

For ease of integration into various circuit designs, the STD7N60M2 is available in a surface-mount DPAK package, which not only saves space on the printed circuit board but also provides excellent thermal performance. The package is designed to handle high levels of thermal stress, ensuring reliability and longevity of the device even under harsh operating conditions.

In summary, the STD7N60M2 from STMicroelectronics is a state-of-the-art power MOSFET that offers a combination of high voltage capability, low on-resistance, and efficient gate charge performance, making it an excellent choice for designers seeking to optimize power efficiency and thermal management in their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0042 $50.2100
125+ $0.8240 $103.0000
190+ $0.7982 $151.6580
260+ $0.7725 $200.8500
335+ $0.7467 $250.1445
450+ $0.6695 $301.2750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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