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STD7NM80

Part No STD7NM80
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6.5A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 3.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 031163-STD7NM80
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD7NM80
Introduction Date September 22, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian STD7NM80 CAD Model

Description

The STD7NM80 is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This N-channel MOSFET is part of ST's MDmesh™ M8 series, which utilizes the company's innovative superjunction technology to offer extremely low on-resistance and gate charge. These features make the STD7NM80 an excellent choice for high-efficiency applications that require superior power density and energy savings.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The device boasts a very low drain-source on-resistance, which translates to reduced conduction losses and improved overall efficiency.
  • High Voltage Capability: With a breakdown voltage of 800V, the STD7NM80 is suitable for high voltage applications, ensuring reliability and robustness in harsh electrical environments.
  • Reduced Gate Charge (Q<sub>g): The optimized gate charge allows for faster switching speeds, thus minimizing energy loss during the switching process and enhancing the performance in high-frequency circuits.
  • Enhanced dv/dt Capability: The device is designed to withstand high voltage transients, offering improved reliability and a longer lifespan for the applications it powers.

Applications

The STD7NM80 is ideally suited for a variety of power applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • Motor Control Applications

Quality and Reliability

STMicroelectronics is committed to delivering products of the highest quality. The STD7NM80 is no exception, as it is designed to meet stringent industry standards for quality and reliability. Customers can trust in the robust performance and long-term reliability of this MOSFET in their critical power management applications.

Environmental Impact

The STD7NM80 is designed with the environment in mind. It complies with STMicroelectronics' commitment to sustainability, including adherence to international environmental standards and the use of eco-friendly materials.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6001 $64.0040
90+ $1.3130 $118.1700
140+ $1.2720 $178.0800
190+ $1.2309 $233.8710
245+ $1.1899 $291.5255
325+ $1.0668 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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