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STD7N80K5

Part No STD7N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 800V 6A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 13.4nC @ 10V
Max Input Capacitance 360pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102917-STD7N80K5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD7N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian STD7N80K5 CAD Model

Description

STD7N80K5 - N-channel 800 V, 1.9 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a DPAK package

The STD7N80K5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, renowned for its advanced MDmesh™ K5 technology. This device is specifically designed to offer high efficiency in a wide range of applications, including switch-mode power supplies (SMPS), lighting applications, adapters, and LED drivers.

With an impressive 800 V drain-source breakdown voltage, the STD7N80K5 ensures robust performance for high-voltage applications. The device also boasts a low on-resistance of 1.9 Ω (typical), which translates to reduced conduction losses and improved overall efficiency. The MOSFET is capable of handling a continuous drain current of 6 A, making it suitable for handling moderate power loads.

Housed in a compact DPAK package, the STD7N80K5 is designed for easy integration into various circuit designs while providing excellent power density. The DPAK package also offers good thermal performance, ensuring the device operates reliably even under high power conditions.

The MDmesh™ K5 technology integrates a vertical structure, which optimizes the RDS(on) area figure of merit. This allows for high switching frequencies and reduced switching losses, making the STD7N80K5 an excellent choice for high-efficiency power conversion. Additionally, this technology provides a very low gate charge (Qg), which further enhances the switching performance.

STMicroelectronics has designed the STD7N80K5 with multiple protection features to ensure safe operation. These include an extended dv/dt capability and an intrinsic fast-recovery body diode, which contribute to the device's reliability and longevity in demanding electrical environments.

In summary, the STD7N80K5 is a versatile and efficient solution for designers looking to improve power management in their applications. Its combination of high voltage capability, low on-resistance, and advanced MDmesh™ K5 technology makes it a prime choice for energy-conscious designs that demand high performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0060 $51.1020
41+ $2.4664 $101.1224
63+ $2.3894 $150.5322
87+ $2.3123 $201.1701
112+ $2.2352 $250.3424
150+ $2.0040 $300.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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