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STD7NK30Z

Part No STD7NK30Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212262-STD7NK30Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD7NK30Z CAD Model

Description

STD7NK30Z - Power MOSFET by STMicroelectronics

The STD7NK30Z is a robust Power MOSFET device engineered by STMicroelectronics, one of the leading names in semiconductor innovation. This particular MOSFET is part of their STripFET™ II series, which is renowned for its high switching performance and low on-state resistance (R<sub>DS(on)). The STD7NK30Z is designed to meet the demanding requirements of a wide range of electronic applications, offering a perfect balance between efficiency and reliability.

With a drain-source voltage (V<sub>DSS) of 300V, the STD7NK30Z is suitable for high-voltage applications. It can handle continuous drain currents (I<sub>D) up to 7A, making it an excellent choice for power supply units, lighting systems, DC-DC converters, and other power management tasks. Furthermore, the device's low threshold voltage ensures that it can be driven at lower gate voltages, which can be beneficial for battery-operated devices where power conservation is crucial.

The MOSFET comes in a compact DPAK (TO-252) surface-mount package, which is not only space-efficient but also facilitates better thermal performance and easier integration into various circuit designs. The package is designed to optimize the R<sub>DS(on) per area, which is a critical factor for applications where efficiency is a priority.

The STD7NK30Z boasts outstanding ruggedness, thanks to its 100% avalanche tested design. This feature provides an additional layer of protection against unexpected voltage spikes, enhancing the longevity and reliability of the device. It also features Zener-protected gate, which helps to shield the gate oxide from electrostatic discharges during handling and operation.

Overall, the STD7NK30Z from STMicroelectronics is a high-performance, versatile Power MOSFET that offers designers a practical solution for managing power in their electronic designs. Its combination of high voltage capability, low on-resistance, and compact packaging makes it an excellent choice for a variety of industrial, consumer, and computing applications.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to visit the STMicroelectronics website or consult the STD7NK30Z datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5403 $59.4330
265+ $0.4434 $117.5010
405+ $0.4296 $173.9880
560+ $0.4157 $232.7920
720+ $0.4019 $289.3680
965+ $0.3603 $347.6895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,990 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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