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IXFN82N60Q3

Name: IXFN82N60Q3
Brand: IXYS
SKU: 1324585
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFN82N60Q3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 66A SOT227B / N-Channel 600 V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B
Datasheet	IXFN82N60Q3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	275 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13500 pF @ 25 V
Power Dissipation (Max)	960W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN82
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	10
Win Source Part Number	1324585-IXFN82N60Q3
Ultra Librarian 3D Model	Ultra Librarian IXFN82N60Q3 CAD Model

Alternative Products

Description

The IXFN82N60Q3 is a discrete semiconductor product that falls under the category of transistors - FETs, MOSFETs - Single. It is an N-channel MOSFET that has a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 66A (Tc) at 25°C.

Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation: 960W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V

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