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STD8N65M5

Part No STD8N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 690pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102924-STD8N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD8N65M5 CAD Model

Description

Product Overview: STD8N65M5 - STMicroelectronics

The STD8N65M5 from STMicroelectronics is a high-performance N-channel Power MOSFET designed for a wide range of applications. This advanced power MOSFET is built using STMicroelectronics' innovative MDmesh™ M5 technology, which combines excellent RDS(on) performance with reduced gate charge, making it a highly efficient choice for power conversion applications.

Key Features

  • Device Type: N-channel Power MOSFET
  • Technology: MDmesh™ M5
  • Maximum Continuous Drain Current (ID): 7 A
  • Drain-Source Voltage (VDS): 650 V
  • On-Resistance (RDS(on)): 0.65 Ω
  • Gate Charge (Qg): Low gate charge for efficient switching
  • Package: PowerFLAT™ 5x6

Applications

The STD8N65M5 is suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • DC-DC Converters
  • High-Efficiency Power Management
  • Motor Control

Performance and Efficiency

With its low on-resistance and high breakdown voltage, the STD8N65M5 is capable of handling high power and high voltage applications with ease. The MOSFET's MDmesh™ M5 technology ensures minimal conduction losses, while its optimized gate charge enables fast switching, reducing losses during the switching process and improving overall efficiency.

Reliability and Durability

The STD8N65M5 is designed for reliability, with a robust package that ensures long-term durability even under challenging conditions. Its high avalanche ruggedness makes it suitable for applications that may experience unexpected voltage spikes, providing designers with a dependable component for their power circuit designs.

Environmental and Regulatory Compliance

STMicroelectronics is committed to environmental responsibility, and the STD8N65M5 is designed to meet various environmental standards. It is RoHS compliant and free from harmful substances, making it a sustainable choice for eco-conscious applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5131 $60.5240
95+ $1.2416 $117.9520
145+ $1.2035 $174.5075
200+ $1.1642 $232.8400
260+ $1.1250 $292.5000
345+ $1.0095 $348.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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