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STF11NM50N

Part No STF11NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 547pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066336-STF11NM50N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF11NM50N CAD Model

Description

The STF11NM50N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed using the innovative MDmesh™ II technology. This advanced technology is tailored for achieving optimal performance in high-voltage power conversion applications, particularly those requiring high efficiency and fast switching.

Key Features

  • High Voltage Capability: With a breakdown voltage of 500 V, the STF11NM50N is suitable for various applications that require high voltage operations, making it a versatile choice for designers.
  • Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)) of 0.38 ohm typ., which enhances its efficiency by minimizing conduction losses.
  • High Current Rating: With a continuous current rating of 11 A, this MOSFET can handle significant power, suitable for robust power supply and conversion systems.
  • Fast Switching Speed: The STF11NM50N is designed for fast switching, which is essential for reducing switching losses and improving the performance of power electronic circuits.
  • Reduced Gate Charge: The MOSFET features a low gate charge, which reduces the power required to drive the gate, thereby increasing the overall efficiency of the device.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and longevity even under stressful conditions.
  • Zener-Protected: The gate of the STF11NM50N is protected by an integrated Zener diode, which safeguards the device from electrostatic discharge (ESD) and other voltage-induced damages.

Applications

The STF11NM50N is designed for a wide range of applications, including:

  • Switching power supplies
  • Power converters and inverters
  • Motor control systems
  • Lighting applications and LED drivers
  • High-performance computing and server power supplies
  • Renewable energy systems such as solar inverters and wind turbines

With its combination of high voltage capability, low on-resistance, high current rating, and fast switching speed, the STF11NM50N from STMicroelectronics is a reliable and efficient solution for designers seeking to optimize their high-voltage power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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