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STF12N65M2

Part No STF12N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16.5nC @ 10V
Max Input Capacitance 535pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1001391-STF12N65M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF12N65M2 CAD Model

Description

STF12N65M2 - N-channel MOSFET by STMicroelectronics

The STF12N65M2 is a high-performance N-channel power MOSFET designed by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ M2 series that features state-of-the-art technology to achieve low on-resistance and reduced switching losses, making it an excellent choice for a variety of power applications.

With a drain-source voltage (V<sub>DS) of 650V, the STF12N65M2 is optimized for high voltage operations. The device boasts a continuous drain current (I<sub>D) of 11A, ensuring robust performance in demanding environments. Its low gate charge (Q<sub>g) combined with a gate-source threshold voltage (V<sub>GS(th)) of 3V to 5V, allows for efficient gate driving, which translates into energy savings and reduced heat dissipation.

The MOSFET's R<sub>DS(on) is exceptionally low, at just 0.47Ω, which is a testament to its ability to conduct high currents with minimal voltage drop and power loss. This characteristic is particularly important in applications such as switch-mode power supplies, lighting, and high-efficiency DC-DC converters, where energy efficiency is paramount.

STMicroelectronics has also integrated a fast recovery diode in the STF12N65M2, which is tailored for high-speed switching. This feature minimizes reverse recovery time and charge, further enhancing the overall efficiency of the device in applications like Power Factor Correction (PFC) circuits.

The STF12N65M2 comes in a TO-220FP package, which is known for its reliability and good thermal performance. The package is designed to handle high thermal and electrical loads, making it suitable for both industrial and consumer applications. Additionally, the device is 100% avalanche tested, ensuring ruggedness and reliability in the field.

Overall, the STF12N65M2 from STMicroelectronics is a powerful and reliable component that offers a combination of high voltage capability, low on-resistance, and efficient switching performance, making it a versatile choice for engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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