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STF14NM65N

Part No STF14NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO-220FP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1300pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066342-STF14NM65N
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF14NM65N CAD Model

Description

The STF14NM65N is a cutting-edge N-channel Power MOSFET from the renowned semiconductor manufacturer STMicroelectronics. This high-performance component is part of the MDmesh™ V series, which is well-known for its excellent efficiency and thermal performance. The device is encapsulated in a TO-220FP package, which is widely used in a range of applications due to its ability to handle high power levels and its ease of mounting on a printed circuit board.

With a voltage rating of 650 V, the STF14NM65N is designed to withstand high voltage conditions, making it an ideal choice for applications that require robust power switching capabilities. This MOSFET features a very low on-resistance of 0.19 Ohm typical, which contributes to its high efficiency by minimizing conduction losses when the device is turned on.

The device is capable of handling a continuous current of up to 11 A, making it suitable for a wide range of power applications. The STF14NM65N utilizes STMicroelectronics' innovative MDmesh™ V technology, which combines a vertical structure with a new proprietary strip layout to yield one of the industry's best on-resistance and dynamic performance. This technology is particularly beneficial in applications such as high-efficiency converters and power supplies.

Additional features of the STF14NM65N include a 100% avalanche tested design, which ensures reliability and robustness under harsh conditions. The device also boasts low gate charge and low crss, which are critical for fast switching applications. Its high dv/dt capability makes it suitable for more demanding electronic designs.

The TO-220FP package of the STF14NM65N is designed to offer excellent thermal transfer, ensuring the device operates within its specified temperature range even at high switching frequencies or high current loads. This makes the STF14NM65N an excellent choice for power conversion applications in industrial, computing, telecom, and consumer markets.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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