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STF18N60M2

Part No STF18N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 21.5nC @ 10V
Max Input Capacitance 791pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212269-STF18N60M2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STF18N60M2 CAD Model

Description

STF18N60M2 - N-channel 600 V, 0.280 Ohm typ., 13 A MDmesh™ M2 Power MOSFET - STMicroelectronics

The STF18N60M2 from STMicroelectronics is a high-performance N-channel Power MOSFET, part of the MDmesh™ M2 series, designed for delivering exceptional efficiency and reliability. This MOSFET utilizes the second generation of MDmesh™ technology, which combines the benefits of reduced on-resistance and fast switching with the ruggedness and performance stability at high temperatures that modern power applications demand.

With a drain-source voltage (V<sub>DS) of 600 V, the STF18N60M2 is particularly well-suited for high voltage applications such as switch-mode power supplies, lighting, welding, AC-DC converters, and power factor correction circuits. Its low on-resistance of 0.280 Ohm typ. contributes to reduced conduction losses, making the device energy-efficient and capable of handling continuous currents up to 13 A.

The MOSFET's package is TO-220FP, a widely used and robust package that ensures good thermal performance and simplifies mounting on a heatsink. The device also features Zener-protected gate, providing enhanced protection against overvoltage and ensuring a higher level of reliability for sensitive applications.

Key Features:

  • Drain-source Voltage (V<sub>DS): 600 V
  • Current rating (I<sub>D): 13 A
  • On-resistance (R<sub>DS(on)): 0.280 Ohm typ.
  • Low gate charge (Q<sub>g)
  • Fast switching speed
  • 100% avalanche tested
  • Zener-protected gate
  • TO-220FP package

The STF18N60M2 is also characterized by its low gate charge (Q<sub>g), which enhances its fast switching capabilities, thereby reducing switching losses and improving overall performance in high-frequency applications. In addition, the device is 100% avalanche tested, which guarantees robustness and long-term reliability, even under the most demanding conditions.

Whether you are designing power supply units, inverters, or any other high-voltage power conversion systems, the STF18N60M2 is an excellent choice that offers a balanced performance for efficiency, speed, and thermal management. With STMicroelectronics' commitment to quality and innovation, this Power MOSFET stands out as a reliable and efficient component for your power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7708 $50.1020
160+ $0.6325 $101.2000
245+ $0.6127 $150.1115
340+ $0.5930 $201.6200
440+ $0.5732 $252.2080
585+ $0.5139 $300.6315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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