The STF21NM60ND is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology. This MOSFET is part of the MDmesh™ II Plus low Qg series, designed to offer outstanding efficiency in a wide range of applications by combining a state-of-the-art proprietary strip layout with the company's advanced silicon technology.

Key Features

• High Voltage Capability: The STF21NM60ND is designed to handle continuous drain currents of up to 18A with a drain-source voltage of 600V, making it suitable for high-voltage applications.
• Low On-Resistance: With an on-resistance (R_DS(on)) of just 0.19Ω, this MOSFET ensures high efficiency and minimizes power loss during operation.
• Reduced Gate Charge: The device features a low gate charge (Qg), which enhances its switching performance and makes it ideal for high-frequency circuits.
• Fast Recovery Diode: An integrated fast recovery diode provides protection against reverse voltage transients, further improving reliability and performance.
• 100% Avalanche Tested: This MOSFET is guaranteed to withstand rugged operating conditions, as it is fully tested for avalanche ruggedness.

Applications

The STF21NM60ND is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High-efficiency DC/DC converters
• Motor control circuits
• LED lighting solutions
• Power factor correction circuits

Package and Quality

Encased in a TO-220FP package, the STF21NM60ND ensures a robust and reliable solution for through-hole mounting, which is suitable for a wide range of PCB layouts. STMicroelectronics is committed to delivering products that meet the highest quality and reliability standards, and the STF21NM60ND is no exception. It is RoHS compliant and conforms to international environmental standards, ensuring its suitability for eco-friendly applications and global markets.