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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1270pF @ 50V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102957-STF30N10F7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF30N10F7 CAD Model

Description

STF30N10F7 - High-Performance MOSFET by STMicroelectronics

The STF30N10F7 is a state-of-the-art N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This high-performance MOSFET is part of STMicroelectronics' STripFET F7 series, which is known for its low on-resistance and low gate charge, making it an excellent choice for a wide range of power applications.

With a drain-source voltage (V<sub>DS) of 100V, the STF30N10F7 is well-suited for high voltage applications that require efficient power management. It features an advanced silicon technology that provides superior switching performance, which is crucial for power supplies, DC-DC converters, motor control circuits, and other demanding applications.

The device boasts a continuous drain current (I<sub>D) of 30A at 25°C, which ensures that it can handle significant power without overheating. Its low threshold voltage (V<sub>GS(th)) enhances the MOSFET's ability to operate at lower gate voltages, thus reducing power consumption and improving overall efficiency.

One of the key features of the STF30N10F7 is its low on-resistance (R<sub>DS(on)), which stands at just 0.073Ω. This low resistance minimizes conduction losses and allows for higher current flow, further enhancing the efficiency of the device. Moreover, the MOSFET is encapsulated in a TO-220FP package, which provides a robust and reliable form factor for easy mounting on printed circuit boards (PCBs).

The STF30N10F7 also includes a built-in avalanche ruggedness, which provides protection against sudden voltage spikes, ensuring the longevity and reliability of the MOSFET under harsh operating conditions. This feature is particularly important for applications that are prone to voltage transients.

In summary, the STF30N10F7 from STMicroelectronics is an exemplary component for designers looking to optimize power efficiency and performance in their electronic designs. Its combination of low on-resistance, high current capability, and advanced protection features make it a top choice for a variety of power management applications.

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