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STF38N65M5

Part No STF38N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 30A TO220FP  /  N-Channel 650 V 30A (Tc) 35W (Tc) Through Hole TO-220FP
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF38
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13102-5,497-13102-5
Standard Package 50
Win Source Part Number 1041527-STF38N65M5
Ultra Librarian 3D Model Ultra Librarian STF38N65M5 CAD Model

Description

STF38N65M5 Power MOSFET by STMicroelectronics

The STF38N65M5 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This device is part of the MDmesh™ M5 series, which utilizes the fifth generation of STMicroelectronics' proprietary super-junction technology, offering remarkable efficiency and power density.

With a robust design capable of handling a maximum drain-source voltage (V<sub>DS) of 650V, the STF38N65M5 is well-suited for high-voltage applications. This MOSFET is optimized for high switching frequencies, which makes it an excellent choice for switched-mode power supplies (SMPS), lighting applications, solar inverters, welding equipment, and high-performance drives.

The STF38N65M5 boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.036 Ω, which significantly reduces conduction losses and improves overall efficiency. This is particularly beneficial in applications where power efficiency is critical. Additionally, the device's low gate charge (Q<sub>g) ensures reduced switching losses, further enhancing its performance in high-frequency circuits.

Another key feature of the STF38N65M5 is its high threshold voltage (V<sub>th), which provides better immunity against unintended turn-ons, thereby improving the reliability of the end application. The device also includes a fast recovery diode, which is essential for high-efficiency operations and minimizes the reverse recovery losses that can occur in fast-switching applications.

The STF38N65M5 is housed in a TO-220FP package, which is widely recognized for its thermal performance and mechanical robustness. This package ensures that the device can handle high levels of thermal stress and provides a reliable mechanical interface for heatsink attachment, which is vital for maintaining optimal operating temperatures and prolonging the lifespan of the device.

In summary, the STF38N65M5 Power MOSFET from STMicroelectronics is an advanced component designed for applications requiring high efficiency, fast switching, and reliability under high-voltage conditions. Its cutting-edge technology and robust package make it a top choice for engineers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.3705 $50.9640
20+ $5.2271 $104.5420
30+ $5.0637 $151.9110
41+ $4.9004 $200.9164
53+ $4.7370 $251.0610
71+ $4.2470 $301.5370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 925 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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