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STFI12N60M2

Part No STFI12N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 538 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak
Base Product Number STFI12N
Other Names 497-16015-5,-497-16015-5
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278067-STFI12N60M2
Ultra Librarian 3D Model Ultra Librarian STFI12N60M2 CAD Model

Description

STFI12N60M2 - N-channel 600 V, 0.28 Ω typ., 10 A MDmesh™ M2 Power MOSFET in I²PAKFP Package

The STFI12N60M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed with the advanced MDmesh™ M2 technology. This cutting-edge component is tailored for applications requiring high efficiency and power density. Its 600 V breakdown voltage makes it an excellent choice for high-voltage power conversion systems.

With a typical on-resistance of just 0.28 Ω, the STFI12N60M2 ensures minimal conduction losses, which is crucial for maintaining efficiency in power supply operations. Its 10 A continuous current rating allows for robust performance in a wide range of applications, including switch-mode power supplies (SMPS), LED lighting, and high-efficiency converters.

The I²PAKFP (also known as TO-262) package is designed to offer a compact footprint while maintaining good thermal performance, making it suitable for space-constrained applications that require efficient heat dissipation. The package is also known for its enhanced mechanical durability and ease of mounting on a printed circuit board (PCB).

This Power MOSFET incorporates several features that contribute to its reliability and performance:

  • Zener-protected: The gate-source is protected with an integrated Zener diode, which provides protection against electrostatic discharge (ESD) and enhances the ruggedness of the device.
  • Low gate charge (Qg): This characteristic enables faster switching performance, which is beneficial for applications requiring high switching frequencies.
  • 100% avalanche tested: This guarantees that the device can withstand stressful conditions, making it a reliable choice for applications that may experience unexpected voltage spikes.

STMicroelectronics' commitment to innovation is evident in the STFI12N60M2, which is designed to meet the stringent requirements of modern electronic systems. Whether you're designing an energy-efficient power supply or a high-performance inverter, the STFI12N60M2 provides the reliability, efficiency, and power density necessary to excel in your application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1311 $58.3395
1,075+ $0.1076 $115.6700
1,665+ $0.1043 $173.6595
2,290+ $0.1009 $231.0610
2,965+ $0.0975 $289.0875
3,965+ $0.0875 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,680 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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