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STFI24N60M2

Part No STFI24N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 18A TO281
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1060pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAKFP (TO-281)
Dimension TO-262-3 Full Pack, I2Pak
Win Source Part Number 1102984-STFI24N60M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STFI24N60M2 CAD Model

Description

The STFI24N60M2 is a high-performance Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its excellent energy efficiency and thermal performance. The STFI24N60M2 is designed to meet the demands of a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and other high-power, high-efficiency applications.

Key Features

  • Voltage Rating: The MOSFET operates at a drain-source voltage (V<sub>DS) of 600V, making it suitable for high-voltage applications.
  • Current Capacity: It has a continuous drain current (I<sub>D) of 17A, providing robust power handling capability.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.190 Ω, it ensures minimal power loss during operation, enhancing overall system efficiency.
  • Fast Switching: The device features fast switching speed, which is crucial for reducing switching losses and improving performance in power conversion applications.
  • Enhanced dv/dt Capability: The STFI24N60M2 is designed to withstand high voltage transients, ensuring reliability under harsh conditions.
  • 100% Avalanche Tested: This guarantees the MOSFET's ruggedness and reliability in applications prone to high energy pulses.

Package and Mounting

The STFI24N60M2 is encapsulated in an ISOTOP package, which is known for its excellent thermal transfer characteristics. The package is designed to be mounted directly onto a heatsink, making it ideal for applications requiring high thermal performance and compact designs.

Applications

This Power MOSFET is versatile and can be used in a variety of power applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power factor correction circuits
  • Electronic ballasts for lighting
  • Inverters for solar energy systems
  • Induction heating and welding equipment

In summary, the STFI24N60M2 by STMicroelectronics is a state-of-the-art Power MOSFET that offers superior performance for power electronics engineers looking to enhance efficiency, reduce losses, and ensure reliability in their high-voltage power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0065 $51.1105
41+ $2.4669 $101.1429
63+ $2.3898 $150.5574
87+ $2.3127 $201.2049
112+ $2.2357 $250.3984
150+ $2.0044 $300.6600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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