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STFI8N80K5

Part No STFI8N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH5™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak
Base Product Number STFI8
Other Names -497-13868-5,497-13868-5
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277973-STFI8N80K5
Ultra Librarian 3D Model Ultra Librarian STFI8N80K5 CAD Model

Description

STFI8N80K5 - N-channel 800 V, 1.9 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

The STFI8N80K5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to meet the high efficiency and reliability demands of modern electronic applications. This device is a part of the MDmesh™ K5 series, which utilizes innovative proprietary technology, offering excellent RDS(on) per area and reduced gate charge. These features make the STFI8N80K5 an ideal choice for high-performance switch-mode applications.

Key Features:

  • High Voltage Rating: With an 800 V drain-source breakdown voltage (V<sub>DS), the STFI8N80K5 is suitable for high voltage applications, ensuring robustness and reliability in harsh conditions.
  • Low On-Resistance: The device boasts a typical on-resistance (RDS(on)) of 1.9 Ohm, providing reduced conduction losses and enhancing overall efficiency.
  • High Current Capability: The MOSFET can handle a continuous drain current (I<sub>D) of 8 A, making it capable of powering a wide range of applications.
  • Reduced Gate Charge (Q<sub>g): A lower gate charge facilitates faster switching speeds, which is critical for increasing the efficiency of power conversion circuits.
  • TO-220FP Package: The TO-220FP package offers a compact design with good thermal performance, making it easy to integrate into various circuit designs.

Applications:

The STFI8N80K5 is suitable for a broad spectrum of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • Motor Control

With its robust design and advanced technology, the STFI8N80K5 from STMicroelectronics is an excellent choice for designers looking to improve the efficiency, thermal management, and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4799 $59.5176
57+ $2.0349 $115.9893
88+ $1.9713 $173.4744
122+ $1.9078 $232.7516
157+ $1.8441 $289.5237
210+ $1.6533 $347.1930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,690 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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