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STFW1N105K3

Part No STFW1N105K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH3™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 100 V
Power Dissipation (Max) 20W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF
Package / Case TO-3P-3 Full Pack
Base Product Number STFW1
Other Names 497-STFW1N105K3,497-13646-5,497-13646-5,-497-13646-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277978-STFW1N105K3
Ultra Librarian 3D Model Ultra Librarian STFW1N105K3 CAD Model

Description

STFW1N105K3 - STMicroelectronics N-Channel MOSFET

The STFW1N105K3 is a cutting-edge N-channel MOSFET from STMicroelectronics, renowned for its high efficiency and reliability in a wide range of applications. This power MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a robust and flexible component for their power management solutions.

With a maximum drain-source voltage (V<sub>DS) of 1050V, the STFW1N105K3 is well-suited for high-voltage applications. It is capable of handling continuous drain currents (I<sub>D) up to 3A, making it a suitable choice for moderate power tasks. The device also features a low gate charge (Q<sub>g), which enhances its switching performance and efficiency, a critical aspect for power supplies, lighting, and industrial applications.

The STFW1N105K3 is housed in a TO-3PF package, which is known for its excellent thermal characteristics. This package ensures that the MOSFET can operate reliably even under high temperature conditions, with a maximum junction temperature (T<sub>j) of 150°C. The TO-3PF package also provides a robust mechanical structure, ensuring the MOSFET's durability and longevity in various environments.

One of the key features of the STFW1N105K3 is its low on-resistance (R<sub>DS(on)), which minimizes power losses and improves overall efficiency. This characteristic is particularly beneficial in applications where energy conservation is of paramount importance, such as in renewable energy systems and energy-efficient power supplies.

The device also includes built-in protection features such as avalanche ruggedness and a 100% avalanche tested guarantee, which provide additional safety margins in harsh operating conditions. These features make the STFW1N105K3 a reliable choice for designers looking to enhance system robustness and reduce the risk of failure.

In summary, the STFW1N105K3 from STMicroelectronics is a high-voltage, high-efficiency N-channel MOSFET that offers excellent thermal performance, low on-resistance, and robust protection features. Its versatility makes it an ideal choice for a variety of applications, including switch-mode power supplies, LED lighting solutions, and industrial power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2176 $57.9168
44+ $2.6401 $116.1644
68+ $2.5576 $173.9168
94+ $2.4751 $232.6594
121+ $2.3926 $289.5046
162+ $2.1451 $347.5062
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 715 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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