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STGD7NB60S

Part No STGD7NB60S
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description N-CHANNEL 7A - 600V DPAK Power MESH IGBT
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Win Source Part Number 1261019-STGD7NB60S
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGD7NB60S CAD Model

Description

STGD7NB60S - N-Channel 600V Power MOSFET by STMicroelectronics

The STGD7NB60S is a state-of-the-art N-Channel Power MOSFET presented by STMicroelectronics, designed to deliver high-efficiency power control and conversion for a diverse range of applications. This device is a part of ST's DPAK product line, known for its compact footprint and exceptional thermal performance, making it suitable for space-constrained and power-dense designs.

Key Features

  • Voltage Rating: With a drain-source voltage (VDS) of 600V, the STGD7NB60S is well-suited for high voltage applications, offering robust performance for switching operations.
  • Current Capacity: It can handle a continuous drain current (ID) of up to 7A, making it capable of driving moderate to high current loads.
  • Low On-Resistance: The on-resistance (RDS(on)) is as low as 1.15 ohms, which minimizes conduction losses and improves overall efficiency.
  • Fast Switching Speed: The fast switching capability of the MOSFET ensures reduced switching losses, which is critical for high-frequency power conversion.
  • Enhanced Durability: It features a ruggedized design that can withstand high energy pulses in the avalanche and commutation modes, ensuring reliability in harsh conditions.

Applications

The STGD7NB60S is versatile and can be employed in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control circuits
  • Lighting applications, such as LED drivers
  • Electronic ballasts for fluorescent lighting

Advanced Technology

Utilizing STMicroelectronics' advanced STripFET™ technology, the STGD7NB60S MOSFET offers an optimal trade-off between on-state resistance and switching performance, ensuring high efficiency and power density. The device's structure is engineered to minimize gate charge (Qg), reduce capacitance, and to provide exceptional dv/dt capability, which translates to a reliable and efficient performance in high-speed switching applications.

Package and Environmental Compliance

The STGD7NB60S comes in a surface-mount DPAK package, which is designed for compact PCB layouts and simplified assembly processes. Additionally, it complies with RoHS and is free from environmentally harmful substances, aligning with global environmental regulations and standards for electronic components.

With its robust design, advanced technology, and versatile application range, the STGD7NB60S from STMicroelectronics represents a reliable and efficient solution for designers looking to improve the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7059 $59.7065
85+ $1.3999 $118.9915
130+ $1.3560 $176.2800
180+ $1.3121 $236.1780
230+ $1.2682 $291.6860
305+ $1.1377 $346.9985
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Availability: 7,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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