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Same model may have multiple batches, images only for reference.
HGTP15N50C1 Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTP15N50C1

Part No HGTP15N50C1
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 15A, 500V, N-CHANNEL IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 500 V
Current - Collector (Ic) (Max) 15 A
Current - Collector Pulsed (Icm) 35 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 20V, 35A
Power - Max 75 W
Input Type Standard
Gate Charge 33 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597693-HGTP15N50C1
Ultra Librarian 3D Model Ultra Librarian HGTP15N50C1 CAD Model

Description

The 597693-HGTP15N50C1 is a single IGBT (Insulated Gate Bipolar Transistor) discrete semiconductor product from Harris Corporation.

  • Maximum Power: 75W
  • Collector-Emitter Breakdown Voltage: 500V
  • Maximum Collector Current: 15A
  • Pulsed Current: 35A
  • On-State Voltage: 3.2V @ 20V Gate Voltage and 35A Collector Current
  • Gate Charge: 33nC
  • Package Type: TO-220-3
  • Mounting Type: Through-Hole

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