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STGFW40H65FB

Part No STGFW40H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT HB 650V 40A ISOWATT218
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 80 A 62.5 W Through Hole TO-3PF-3
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-3P-3 Full Pack
Case / Package TO-3PF-3
Family Name STGFW40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-15540-5, -497-15540-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897992-STGFW40H65FB
Ultra Librarian 3D Model Ultra Librarian STGFW40H65FB CAD Model

Description

STGFW40H65FB - High-Efficiency Power Device from STMicroelectronics

The STGFW40H65FB is an advanced power semiconductor device designed and manufactured by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and high-performance products. This particular device is part of the company's STPOWER family, which is renowned for its superior power transistors designed to handle a wide range of applications requiring high efficiency, reliability, and energy savings.

The STGFW40H65FB is a 650V, 40A Field Stop Trench IGBT (Insulated Gate Bipolar Transistor). It is engineered to deliver outstanding performance in hard-switching applications while maintaining a high level of efficiency. This makes it an ideal choice for applications such as solar inverters, UPS systems, welding equipment, and any high-power, high-switching-frequency circuits.

One of the key features of the STGFW40H65FB is its Field Stop Trench technology, which significantly reduces on-state voltage drop and switching losses. This technology allows the IGBT to operate at a lower temperature, thus enhancing its reliability and extending its lifespan. Additionally, the device boasts a robust and rugged design, making it capable of withstanding harsh operating conditions without compromising performance.

The STGFW40H65FB also integrates a fast and soft recovery anti-parallel diode. This diode is optimized to reduce electromagnetic interference (EMI) and to provide a smooth and efficient current flow, which is critical in minimizing losses during the switching process and ensuring the overall system efficiency.

STMicroelectronics has equipped the STGFW40H65FB with a co-packaged solution that includes both the IGBT and the diode in a single package. This integration simplifies the design and reduces the footprint of the power module, allowing for more compact and cost-effective designs in power electronic systems.

In summary, the STGFW40H65FB is a testament to STMicroelectronics' commitment to providing high-performance, energy-efficient solutions for the power electronics industry. Its advanced features, coupled with the company's reputation for quality and reliability, make it a top choice for engineers looking to enhance the performance of their high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5014 $60.0336
57+ $2.0524 $116.9868
88+ $1.9884 $174.9792
121+ $1.9242 $232.8282
156+ $1.8600 $290.1600
208+ $1.6676 $346.8608
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 546 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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