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STGW50NC60W

Part No STGW50NC60W
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 100A 285W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 40A
Maximum Power Dissipation 285W
Total Switching Energy(Ets) 365μJ (on), 560μJ (off)
Input Type Standard
Gate Charge 195nC
Turn-on and Turn-off delay time 52ns/240ns
Testing Conditions 390V, 40A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 Long Leads
Win Source Part Number 066387-STGW50NC60W
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Alternative Energy, Power Management, Maintenance & Repair
Ultra Librarian 3D Model Ultra Librarian STGW50NC60W CAD Model

Description

        

        The STGW50NC60W is a high-performance insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a leader in the semiconductor industry. This IGBT is designed to cater to a wide range of high-efficiency applications, particularly in power conversion and control systems. With its advanced technology, the STGW50NC60W provides an excellent combination of low on-state voltage drop and high-speed switching, making it an ideal choice for both hard-switching and resonant-mode operations.    

    

        The device boasts a maximum collector current of 50A at 25°C, which ensures robust performance in demanding environments. Its collector-emitter voltage is rated at 600V, providing a comfortable margin for high-voltage applications. The STGW50NC60W is also characterized by a low gate charge and minimal internal capacitances, which contribute to its superior switching performance.    

    

        One of the key features of the STGW50NC60W is its co-packaged freewheeling diode, which is specifically optimized for low forward voltage drop and high-speed operation. This integrated diode reduces the need for external components, thus simplifying the design and reducing the overall system cost.    

    

        The IGBT is encapsulated in a TO-247 long leads package, which provides excellent thermal performance and ensures reliable operation even under high power and temperature conditions. This package also allows for easy mounting on heat sinks, which is critical for maintaining thermal stability and prolonging the life of the device.    

    

        STMicroelectronics has equipped the STGW50NC60W with several built-in protection features. These include a robust gate oxide layer, which protects against voltage spikes, and a ruggedized device design that can withstand harsh operating conditions. This makes the STGW50NC60W a highly reliable component for applications such as motor drives, uninterruptible power supplies (UPS), inverter welders, and solar inverters.    

    

        In summary, the STGW50NC60W from STMicroelectronics is a state-of-the-art IGBT that offers exceptional performance for power switching applications. Its high current capacity, low power dissipation, and integrated protection features make it a top choice for designers looking to optimize their power management systems for both performance and reliability.    

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9245 $63.3960
18+ $6.5015 $117.0270
28+ $6.2982 $176.3496
38+ $6.0961 $231.6518
50+ $5.8928 $294.6400
66+ $5.2830 $348.6780
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Availability: 7,800 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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