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STI21NM60ND

Part No STI21NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series FDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI21N
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278127-STI21NM60ND
Ultra Librarian 3D Model Ultra Librarian STI21NM60ND CAD Model

Description

STI21NM60ND - N-Channel MOSFET by STMicroelectronics

The STI21NM60ND is a high-performance N-channel MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to meet the demands of a wide range of applications, offering efficiency, reliability, and power density. It is a crucial component for designers looking to optimize their power management systems.

Key Features

  • Low On-Resistance: The STI21NM60ND features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances the overall efficiency of the system it is used in.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 600V, this MOSFET is suitable for high voltage applications, providing a wide safety margin for electronic designs.
  • High Current Handling: The device is capable of supporting a continuous drain current (I<sub>D) at 21A, making it ideal for handling high current loads.
  • Fast Switching Speed: The fast switching characteristics of the STI21NM60ND enable efficient operation at high frequencies, which is beneficial for applications such as switching power supplies and converters.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, each unit is thoroughly tested for avalanche energy capability.

Applications

The STI21NM60ND is designed for a variety of applications, particularly where power efficiency and density are critical. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • LED Lighting applications
  • High-frequency DC/DC converters

Quality and Environmental Compliance

STMicroelectronics is committed to providing environmentally friendly products. The STI21NM60ND complies with the RoHS directive, ensuring the absence of hazardous substances. Additionally, the MOSFET is manufactured under ISO 9001:2000 quality management standards, reflecting STMicroelectronics' dedication to quality and customer satisfaction.

Whether for industrial, computing, or consumer applications, the STI21NM60ND offers a powerful solution that engineers can rely on for their high-voltage and high-efficiency requirements.

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