The STI23NM60N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using MDmesh™ II technology. This advanced technology has been tailored to achieve the best performance in high-voltage applications, providing both low on-resistance and low gate charge. The device is particularly suitable for high-efficiency power supplies, lighting applications, and power factor correction circuits.

Key Features

• High Voltage Capability: The STI23NM60N is capable of handling voltages up to 600V, making it suitable for a wide range of applications that require high voltage operation.
• Low On-Resistance: With a typical on-resistance of just 0.165 Ω, this MOSFET ensures minimal power loss and improved efficiency in your circuit designs.
• High Current Rating: It can handle continuous currents up to 17 A, making it a robust choice for demanding power applications.
• Reduced Gate Charge: The MOSFET features a low gate charge, which reduces switching losses and leads to better performance in high-frequency switching applications.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and durability even under stress conditions.
• Zener-Protected: The gate-source of this MOSFET is protected with an integrated Zener diode, safeguarding the device from electrostatic discharges and voltage spikes.

Applications

• Switching power supplies
• Power factor correction circuits
• Motor control drivers
• Inverters and converters
• LED and general lighting

The STI23NM60N is a testament to STMicroelectronics' commitment to providing state-of-the-art semiconductor solutions. With its combination of high voltage capability, low on-resistance, and high current handling, this MOSFET is an excellent choice for designers looking to optimize power efficiency and reliability in their electronic designs.