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STI360N4F6

Part No STI360N4F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17930 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI360N
Other Names STI360N4F6,-497-14565-5,497-14565-5
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278164-STI360N4F6
Ultra Librarian 3D Model Ultra Librarian STI360N4F6 CAD Model

Description

The STI360N4F6 is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This Power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switching regulators, switching converters, motor drivers, relay drivers, and more.

Key Features

  • Low On-Resistance: The STI360N4F6 features an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of 60A, this MOSFET can handle high current loads, making it suitable for power-intensive applications.
  • High Switching Speed: The device is designed for fast switching, which is critical for reducing switching losses and improving performance in high-frequency circuits.
  • Robust Thermal Performance: The STI360N4F6 boasts excellent thermal characteristics, ensuring stable operation even under high-temperature conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing reliability under extreme conditions.

Applications

The versatility of the STI360N4F6 allows it to be used in various applications, including:

  • Power supplies and DC-DC converters
  • LED lighting systems
  • Motor control circuits
  • Automotive applications
  • High-performance computing

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 40V Continuous Drain Current (I<sub>D) 60A Power Dissipation (P<sub>D) 180W On-Resistance Max (R<sub>DS(on)) 4.5mΩ Operating Temperature Range -55°C to +175°C

With its advanced technology and robust design, the STI360N4F6 from STMicroelectronics represents a reliable and efficient solution for designers seeking a high-performance Power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3409 $58.5225
61+ $1.9208 $117.1688
94+ $1.8607 $174.9058
129+ $1.8006 $232.2774
166+ $1.7407 $288.9562
223+ $1.5606 $348.0138
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,610 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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