The STI360N4F6 is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This Power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switching regulators, switching converters, motor drivers, relay drivers, and more.
Key Features
- Low On-Resistance: The STI360N4F6 features an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
- High Current Capability: With a continuous drain current (I<sub>D) rating of 60A, this MOSFET can handle high current loads, making it suitable for power-intensive applications.
- High Switching Speed: The device is designed for fast switching, which is critical for reducing switching losses and improving performance in high-frequency circuits.
- Robust Thermal Performance: The STI360N4F6 boasts excellent thermal characteristics, ensuring stable operation even under high-temperature conditions.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing reliability under extreme conditions.
Applications
The versatility of the STI360N4F6 allows it to be used in various applications, including:
- Power supplies and DC-DC converters
- LED lighting systems
- Motor control circuits
- Automotive applications
- High-performance computing
Technical Specifications
Parameter
Value
Drain-source Voltage (V<sub>DS)
40V
Continuous Drain Current (I<sub>D)
60A
Power Dissipation (P<sub>D)
180W
On-Resistance Max (R<sub>DS(on))
4.5mΩ
Operating Temperature Range
-55°C to +175°C
With its advanced technology and robust design, the STI360N4F6 from STMicroelectronics represents a reliable and efficient solution for designers seeking a high-performance Power MOSFET.