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STL180N6F7

Part No STL180N6F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™ F7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4825 pF @ 25 V
Power Dissipation (Max) 4.8W (Ta), 166W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerFlat™ (5x6)
Package / Case 8-PowerVDFN
Base Product Number STL180
Other Names 497-19060-1,497-19060-2,497-19060-6
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278011-STL180N6F7
Ultra Librarian 3D Model Ultra Librarian STL180N6F7 CAD Model

Description

STL180N6F7 Power MOSFET by STMicroelectronics

The STL180N6F7 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the STripFET™ F7 series, which is renowned for its low on-state resistance and high switching performance. The STL180N6F7 is specifically engineered to meet the demanding requirements of modern power electronics applications.

Key Features

  • Low On-Resistance: The STL180N6F7 boasts an exceptionally low on-state resistance (R<sub>DS(on)) of just 5.8 mΩ max, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 120 A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
  • High Switching Performance: The device is optimized for fast switching, reducing switching losses and enhancing performance in applications such as DC/DC converters, motor control, and power management systems.
  • Enhanced Thermal Performance: The MOSFET's advanced package design ensures superior thermal performance, which contributes to system reliability and longevity.
  • 100% Avalanche Tested: Each STL180N6F7 unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh operating conditions.

Applications

The STL180N6F7 is suitable for a wide range of applications, including:

  • High-efficiency DC/DC converters
  • Synchronous rectification
  • Motor drives and control systems
  • Server and telecom power supplies
  • Solar inverters and photovoltaic systems
  • Automotive applications and battery management

Product Specifications

The STL180N6F7 operates with a drain-source voltage (V<sub>DS) of 60V, which is suitable for a variety of mid-range voltage applications. The threshold voltage (V<sub>GS(th)) is in the range of 2.0V to 4.0V, which allows for flexible gate drive designs. The device is also characterized by a low gate charge (Q<sub>g), which enhances its switching performance.

STMicroelectronics' commitment to quality and innovation is reflected in the STL180N6F7 Power MOSFET, making it a reliable and efficient choice for designers looking to optimize their power management solutions.

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