The STL24N60DM2 is a high-performance N-channel 600V MDmesh™ DM2 Power MOSFET designed and manufactured by STMicroelectronics. This advanced power MOSFET is a result of the innovative MDmesh DM2 technology, which combines excellent RDS(on) with reduced gate charge, ensuring high efficiency and reliability for a wide range of applications.

Key Features

• Voltage Rating: The STL24N60DM2 boasts a robust 600V drain-source voltage (VDS), making it well-suited for high-voltage applications.
• Low On-Resistance: With an RDS(on) value of just 0.190 Ω, this MOSFET ensures minimal power loss and heat generation, enhancing the overall efficiency of the system it is used in.
• High Current Capability: This device can handle a continuous drain current (ID) of 18A, providing ample current for demanding power applications.
• Fast Switching Speed: The STL24N60DM2 features a fast switching speed, which is essential for reducing switching losses in high-frequency power conversion systems.
• Enhanced Body Diode: The MOSFET includes an improved body diode with low reverse recovery time (trr), which is critical for high-efficiency power switching and reducing noise in power circuits.

Applications

The STL24N60DM2 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting applications
• High-efficiency DC-DC converters
• Power factor correction circuits
• Welding equipment
• Uninterruptible Power Supplies (UPS)

Reliability and Performance

STMicroelectronics ensures that the STL24N60DM2 meets the highest standards of reliability and performance. It is designed to withstand harsh environments and is characterized by its high junction temperature capability, which guarantees long-term reliability. The MOSFET also features an avalanche ruggedness that provides robustness against unexpected voltage spikes.

Package Information

The STL24N60DM2 is available in a TO-220 package, which is known for its ease of installation and good thermal performance. The package is designed to offer excellent heat dissipation, ensuring that the MOSFET operates within its safe temperature range even under high power conditions.