The STL36N55M5 is a highly efficient N-channel power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This advanced power MOSFET is designed using ST's proprietary MDmesh™ M5 technology, which combines excellent RDS(on) performance with reduced gate charge, making it an ideal choice for a wide range of high-efficiency applications.

Key Features

• Voltage Rating: This MOSFET operates at a drain-source voltage (VDS) of 55V, which is suitable for various mid-range power applications.
• Current Handling: It has a continuous drain current (ID) of 36A, ensuring it can handle significant power levels.
• On-Resistance: The STL36N55M5 boasts an ultra-low on-resistance (RDS(on)) of only 8.9 mOhm at 10V of gate-source voltage (VGS), which translates into higher efficiency and lower heat dissipation during operation.
• Gate Charge: It features an optimized gate charge (Qg) that improves the switching performance, which is particularly beneficial in high-frequency power switching applications.
• Power Dissipation: With a maximum power dissipation (Pd) of 150W, this MOSFET can manage considerable power levels without compromising reliability.

Applications

The STL36N55M5 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting solutions
• DC-DC Converters
• Motor Control systems
• Automotive applications
• High-performance computing and server power supplies

Package and Quality

The MOSFET is housed in a robust and compact PowerFLAT™ 5x6 package that not only saves space but also ensures good thermal performance for better reliability. STMicroelectronics is committed to delivering high-quality products, and the STL36N55M5 is no exception, meeting stringent industry standards for performance and reliability.

With its combination of efficiency, performance, and versatility, the STL36N55M5 from STMicroelectronics represents a top-tier solution for designers looking to optimize their power management systems.