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STLD125N4F6AG

Part No STLD125N4F6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A POWERFLAT  /  N-Channel 40 V 120A (Tc) 130W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™ F6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 10 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerFlat™ (5x6) Dual Side
Package / Case 8-PowerWDFN
Base Product Number STLD125
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-17147-6,497-17147-2,497-17147-1
Standard Package 2,500
Win Source Part Number 1181429-STLD125N4F6AG
Ultra Librarian 3D Model Ultra Librarian STLD125N4F6AG CAD Model

Description

STLD125N4F6AG - Power MOSFET from STMicroelectronics

The STLD125N4F6AG is a high-performance Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of the STripFET F6 series, which is renowned for providing excellent power efficiency and performance in a wide range of applications.

With a drain-source voltage (V<sub>DS) of 40V, the STLD125N4F6AG is designed to handle significant power levels, making it ideal for use in high-efficiency power supplies, motor control systems, and automotive applications. Its low threshold voltage ensures that the device can be easily driven at low voltages, which is particularly beneficial in battery-powered applications.

The STLD125N4F6AG boasts an ultra-low on-resistance (R<sub>DS(on)) of just 1.25 mΩ at 10 V, which significantly reduces conduction losses and improves overall system efficiency. This feature, coupled with a high continuous drain current (I<sub>D) of 120 A, makes this MOSFET a strong choice for high current applications, while also ensuring that power dissipation is kept to a minimum.

This MOSFET comes in a compact and robust PowerFLAT 5x6 package, which not only saves space on the PCB but also offers excellent thermal performance. Its package is designed to handle high thermal and mechanical stress, ensuring reliable operation even under harsh conditions. The STLD125N4F6AG also includes an integrated ESD protection, which provides added durability and longevity for the device by safeguarding it against electrostatic discharge events.

Thanks to its 100% avalanche tested design, the STLD125N4F6AG guarantees safe operation even during extreme conditions. This feature makes it a safe choice for designers looking to implement a robust power management system in their products.

Overall, the STLD125N4F6AG from STMicroelectronics is a powerful and efficient solution for a variety of power management applications. Its high current capability, low on-resistance, and robust package design make it a versatile and reliable component for your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6754 $51.0786
22+ $4.6568 $102.4496
34+ $4.5112 $153.3808
46+ $4.3657 $200.8222
60+ $4.2202 $253.2120
80+ $3.7836 $302.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,102 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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