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STP110N8F6

Part No STP110N8F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 80V 110A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 9130pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 092704-STP110N8F6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STP110N8F6
Introduction Date December 05, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2034
Ultra Librarian 3D Model Ultra Librarian STP110N8F6 CAD Model

Description

STP110N8F6 - N-channel 80 V, 3.7 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a TO-220 package

The STP110N8F6 is a high-performance N-channel Power MOSFET brought to you by STMicroelectronics, one of the industry leaders in semiconductor solutions. This device is a part of the STripFET F6 series, which is renowned for providing excellent on-state resistance (RDS(on)) and superior switching performance. The STP110N8F6 is housed in a robust TO-220 package, making it suitable for a wide range of applications, including but not limited to, power supplies, motor control, and automotive systems.

With a maximum VDS of 80 V and a low on-resistance of just 3.7 mΩ typically, this MOSFET can handle continuous currents up to 80 A, making it an excellent choice for high-efficiency power conversion and management tasks. The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, which helps in reducing the overall power consumption of the system.

The STP110N8F6 features an extremely low gate charge (Qg) and low input capacitance (Ciss), which translates to reduced switching losses and thus, enhances the overall efficiency of your application. This is particularly beneficial in applications where high-frequency switching is a norm, such as in modern power supply units and DC-DC converters.

Moreover, the device is designed to offer high avalanche ruggedness, providing additional reliability under extreme conditions. This makes the STP110N8F6 a robust component that can withstand the rigors of demanding applications.

For thermal management, the TO-220 package provides a straightforward means of attaching a heatsink, ensuring that the MOSFET can maintain optimal performance even under high load conditions. This is crucial for maintaining the longevity and reliability of both the MOSFET and the overall system it is a part of.

In summary, the STP110N8F6 from STMicroelectronics is a powerful and reliable component that offers a combination of low RDS(on), high current capacity, and efficient switching characteristics. Whether you're designing power supplies, motor controllers, or looking for a robust MOSFET for automotive applications, the STP110N8F6 is a choice that promises to deliver performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8586 $51.5160
145+ $0.7045 $102.1525
220+ $0.6825 $150.1500
305+ $0.6605 $201.4525
395+ $0.6385 $252.2075
525+ $0.5724 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 369,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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