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STP11NM60FP

Part No STP11NM60FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 092016-STP11NM60FP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP11NM60FP CAD Model

Description

STP11NM60FP - N-Channel MOSFET from STMicroelectronics

The STP11NM60FP is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and power management systems.

With a drain-source voltage (VDS) of 600V, the STP11NM60FP is well-suited for high voltage operations, ensuring it can handle the demands of various electrical circuits. The device also boasts a continuous drain current (ID) of 11A, making it capable of driving significant loads without performance degradation.

The MOSFET's low on-resistance (RDS(on)) is a key feature, providing improved efficiency by minimizing power losses during operation. This low RDS(on) translates into better thermal performance and allows for a more compact design due to reduced heat sinking requirements.

One of the standout features of the STP11NM60FP is its fast-switching capability. This is critical for applications where switching speed is essential to minimize energy wastage and to achieve better power conversion efficiency. The device's fast-switching performance is complemented by its robust body diode, which can handle high-speed switching and energy recovery with ease.

The STP11NM60FP also incorporates enhanced avalanche ruggedness, providing additional protection against unexpected voltage spikes and ensuring reliable operation under harsh conditions. This feature is particularly important for power supplies and other applications that may be subject to voltage transients.

For ease of integration, the STP11NM60FP comes in a fully isolated TO-220FP package, which simplifies the mounting process and offers improved thermal management. The package ensures that the device can be used in a wide variety of PCB layouts without concerns about electrical isolation.

In summary, the STP11NM60FP from STMicroelectronics is a robust and efficient solution for designers looking to optimize their power management systems. With its high voltage capability, low on-resistance, fast-switching performance, and enhanced ruggedness, this MOSFET stands out as a reliable component for demanding electronic applications.

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