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STP12NM60N

Part No STP12NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30.5nC @ 10V
Max Input Capacitance 960pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 410 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 054250-STP12NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP12NM60N CAD Model

Description

The STP12NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to meet the needs of a wide range of high-efficiency power conversion applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced Technology: The STP12NM60N utilizes STMicroelectronics' advanced MDmesh™ technology, which combines a vertical structure with a new charge balance mechanism. This results in a significant reduction in on-resistance and total gate charge, enhancing the overall efficiency of the device.
  • High Voltage Capability: With a breakdown voltage of 600V, this Power MOSFET can handle high voltage applications with ease, providing a wide safety margin for electrical equipment.
  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)) of 0.52 ohms, which minimizes conduction losses and improves overall power efficiency.
  • High Current Rating: The STP12NM60N can support a continuous drain current (I<sub>D) of up to 11.4A, making it suitable for high current applications.
  • Reduced Switching Losses: Fast switching characteristics of this MOSFET result in reduced switching losses, which is crucial for high-frequency power converters.
  • Enhanced Thermal Performance: The package is designed to offer excellent thermal resistance, ensuring reliable operation even under high temperature conditions.

Applications

The versatility of the STP12NM60N allows it to be used in various application areas, including:

  • Switching regulators and converters
  • DC/AC inverters for solar energy systems
  • Uninterruptible Power Supplies (UPS)
  • Motor drives and controls
  • Power management circuits

In conclusion, the STP12NM60N from STMicroelectronics is a robust and reliable choice for designers looking to improve the efficiency and performance of their power conversion systems. Its cutting-edge technology and high power capabilities make it a go-to component for a wide array of industrial and consumer applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8099 $63.3465
80+ $1.4853 $118.8240
125+ $1.4391 $179.8875
170+ $1.3929 $236.7930
215+ $1.3467 $289.5405
290+ $1.2070 $350.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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