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STP13N60DM2

Part No STP13N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP13
Standard Package 2,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278114-STP13N60DM2
Ultra Librarian 3D Model Ultra Librarian STP13N60DM2 CAD Model

Description

STP13N60DM2 - Power MOSFET from STMicroelectronics

The STP13N60DM2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. It is part of ST's MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and thermal performance. This MOSFET is designed to meet the demanding requirements of a wide range of power applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters.

The device features a state-of-the-art MDmesh™ DM2 technology that combines a vertical structure with a new proprietary diffusion process. This unique combination results in a product with an extremely low on-resistance (R<sub>DS(on)) and a high breakdown voltage of 600V, making it suitable for handling high voltages and reducing conduction losses.

With a continuous drain current (I<sub>D) of up to 13A at 25°C, the STP13N60DM2 can efficiently manage significant power levels. It also boasts a low gate charge (Q<sub>g), which translates to reduced switching losses, enhancing the overall efficiency of the system in which it is implemented.

The device is encapsulated in a robust TO-220 package, which is widely used in the industry and known for its good thermal and electrical performance. This package ensures the MOSFET can operate at high temperatures with a maximum junction temperature of 150°C, providing reliability even under stressful conditions.

The STP13N60DM2 also features fast recovery diode characteristics, which are critical for reducing electromagnetic interference (EMI) and improving the performance of the power circuit. This makes it an excellent choice for applications that require high-speed switching.

Furthermore, this MOSFET is designed with 100% avalanche tested guarantees, ensuring ruggedness and reliability. It also complies with the stringent RoHS and Halogen-free requirements, demonstrating STMicroelectronics' commitment to environmental sustainability.

Overall, the STP13N60DM2 Power MOSFET is an ideal solution for designers looking for a high-voltage, high-efficiency, and reliable component for their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7418 $51.9260
165+ $0.6087 $100.4355
255+ $0.5897 $150.3735
355+ $0.5707 $202.5985
455+ $0.5516 $250.9780
610+ $0.4946 $301.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,980 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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