STP18N60DM2 - N-Channel MOSFET by STMicroelectronics

The STP18N60DM2 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of ST's MDmesh™ DM2 series, which is designed to offer extremely low on-state resistance (R_DS(on)) with a high breakdown voltage, making it an excellent choice for a wide range of power applications.

Key Features

• High Voltage Capability: The STP18N60DM2 can handle a drain-source voltage (V_DS) of up to 600V, which is suitable for high voltage applications.
• Low On-Resistance: With an on-state resistance as low as 0.165Ω, this MOSFET ensures high efficiency and minimal power loss during operation.
• High Current Rating: It supports a continuous drain current (I_D) of 18A, making it capable of handling high power loads.
• Fast Switching Speed: The device features a fast switching speed, which is ideal for applications requiring high-frequency operation.
• Reduced Gate Charge: A low gate charge (Q_g) reduces the power required to switch the device, contributing to overall system efficiency.
• 100% Avalanche Tested: Ensuring reliability, each unit is tested for avalanche ruggedness, which is critical for applications subject to high voltage transients.

Applications

The STP18N60DM2 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC-DC Converters
• Power Factor Correction (PFC) circuits
• Lighting Applications (e.g., LED Drivers)
• Motor Control Systems
• Welding Equipment

Quality and Environmental Compliance

STMicroelectronics is committed to environmental sustainability and quality. The STP18N60DM2 complies with RoHS and is manufactured in facilities certified to ISO 9001:2015 and ISO/TS 16949 for quality management, ensuring that it meets the highest standards of production and reliability.