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STP200N4F3

Part No STP200N4F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 5100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1103662-STP200N4F3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP200N4F3 CAD Model

Description

STP200N4F3 - STMicroelectronics N-Channel MOSFET

The STP200N4F3 is a high-performance N-Channel MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is specifically designed to deliver efficiency and reliability for a wide range of applications, including high-efficiency converters, motor control, and power management solutions.

Key Features:

  • Low On-Resistance: The STP200N4F3 boasts an extremely low on-resistance (R<sub>DS(on)) of just 4.3 mΩ, which significantly reduces conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 120 A, this MOSFET can handle high current applications with ease, making it suitable for demanding power systems.
  • High Voltage Threshold: The device can withstand drain-source voltages (V<sub>DS) up to 40V, providing a good safety margin for applications with potential voltage spikes.
  • Low Gate Charge: A low gate charge (Q<sub>g) ensures faster switching performance, which is crucial for high-frequency power switching applications.
  • 100% Avalanche Tested: Guaranteed reliability as each unit is tested for avalanche ruggedness, ensuring the MOSFET can cope with stressful conditions.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems
  • LED Lighting Solutions

The STP200N4F3 is housed in a TO-220 package, which is known for its robustness and excellent thermal performance. This package makes the MOSFET suitable for through-hole mounting, which is preferred in applications where mechanical stress could be an issue.

STMicroelectronics has equipped the STP200N4F3 with advanced technology to ensure minimal conduction and switching losses. This results in a highly efficient power MOSFET that can significantly reduce energy consumption in various electronic applications. With its combination of low on-resistance, high current handling, and fast switching capabilities, the STP200N4F3 is an excellent choice for designers looking to optimize the performance and efficiency of their power management systems.

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