STP210N75F6 - N-channel 75V, 3.3 mOhm typ., 120A STripFET™ F6 Power MOSFET

The STP210N75F6 is a high-performance N-channel Power MOSFET produced using STMicroelectronics' advanced STripFET™ F6 technology. This MOSFET is designed to address the increasing demand for energy efficiency and power density in a wide range of applications. Its features make it an excellent choice for high-efficiency solutions where low on-resistance and high switching performance are critical.

Key Features

• Low Threshold Voltage (V<sub>GS(th)): This feature ensures that the MOSFET can operate effectively at lower gate voltages, making it suitable for low-voltage applications.
• Low On-resistance (R<sub>DS(on)): At just 3.3 mOhm (typical), the STP210N75F6 boasts very low on-resistance, which translates to reduced conduction losses and improved overall efficiency.
• High Current Capability: With a continuous drain current (I<sub>D) of 120A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
• 75V Drain-Source Voltage (V<sub>DS): The device can sustain a maximum voltage of 75V across the drain-source terminals, providing a good safety margin for a variety of applications.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability under extreme conditions.
• Low Gate Charge (Q<sub>g): The MOSFET has a low gate charge, which improves the switching performance and reduces switching losses.

Applications

The STP210N75F6 is versatile and can be used in a broad range of applications, including, but not limited to:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Control
• Automotive Applications
• Power Management Solutions

Conclusion

The STP210N75F6 N-channel Power MOSFET from STMicroelectronics is a state-of-the-art semiconductor device that combines high efficiency, robustness, and reliability. With its low on-resistance, high current capability, and advanced technology, it is well-suited for a wide range of power applications that demand high performance and energy efficiency.