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STP22N60M6

Part No STP22N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP22
Standard Package 1,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278045-STP22N60M6
Ultra Librarian 3D Model Ultra Librarian STP22N60M6 CAD Model

Description

STP22N60M6 - Power MOSFET by STMicroelectronics

The STP22N60M6 is a state-of-the-art Power MOSFET device engineered by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and high-performance products. This particular MOSFET is part of the MDmesh™ M6 series which features extremely low on-resistance, R<sub>DS(on), combined with a high threshold voltage, making it an ideal choice for a wide range of high-efficiency applications.

With a drain-source voltage (V<sub>DS) of 600V, the STP22N60M6 is designed to handle high voltage operations with ease, providing a robust solution for power conversion systems. The device's maximum continuous drain current (I<sub>D) is rated at 22A, ensuring that it can support significant current loads without performance degradation, which is essential for applications requiring reliable power handling capabilities.

The STP22N60M6 utilizes STMicroelectronics' advanced MDmesh™ technology, which is renowned for its ability to reduce conduction losses. This technology, combined with an optimized body-drain diode, significantly diminishes recovery time and minimizes the associated power dissipation, making the MOSFET highly efficient for switching applications such as Power Supply Units (PSUs), LED lighting, welding equipment, and solar inverters.

Additionally, the device boasts a low gate charge (Q<sub>g), which translates to reduced switching losses and enables faster switching frequencies, further enhancing the overall efficiency of the system it is integrated into. This feature, along with its low intrinsic capacitances, makes the STP22N60M6 an excellent choice for high-frequency circuits.

The STP22N60M6 is encapsulated in a TO-220 package, which is widely used and favored for its ease of installation and ability to handle high power levels. The package's design also allows for efficient heat dissipation, which is critical for maintaining thermal stability during operation.

In summary, the STP22N60M6 from STMicroelectronics is a high-performance Power MOSFET that combines high voltage capability, low on-resistance, and advanced MDmesh™ technology to deliver superior efficiency and reliability. It is an ideal component for designers looking to enhance the performance of their power management systems while maintaining energy efficiency and thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2924 $59.2632
43+ $2.7015 $116.1645
67+ $2.6170 $175.3390
92+ $2.5326 $232.9992
118+ $2.4483 $288.8994
158+ $2.1950 $346.8100
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Availability: 6,710 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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