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STP22NE10L

Part No STP22NE10L
Manufacturer STMicroelectronics
Catalog Electronic Wholesale
Description N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET  POWER MOSFET
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Manufacturer STMicroelectronics
Win Source Part Number 1261701-STP22NE10L
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian STP22NE10L CAD Model

Description

The STP22NE10L is a high-performance N-Channel enhancement-mode power field-effect transistor (MOSFET) designed and manufactured by STMicroelectronics, a leader in semiconductor technology. This MOSFET is part of ST's portfolio of power transistors which are renowned for their efficiency, reliability, and thermal performance. It is specifically engineered to address a wide range of power applications, making it a versatile component for any power management or switching task.

The STP22NE10L boasts a robust and durable design, encapsulated in a TO-220 package, which is widely recognized for its ease of mounting and excellent thermal dissipation characteristics. The device is capable of handling high continuous drain currents up to 22A, making it suitable for high current applications. It also features a low gate charge and low on-resistance, which significantly reduces conduction and switching losses, enhancing overall system efficiency.

With a maximum drain-source voltage (V<sub>DS) of 100V, the STP22NE10L provides a good safety margin for applications that may experience high voltage transients. This MOSFET is also characterized by a threshold voltage (V<sub>GS(th)) that ensures a low gate drive requirement, enabling the use of smaller and more cost-effective driving circuits.

The device's fast switching speed is another key feature, making it an ideal choice for high-frequency applications such as switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and other power-related electronic circuits. The STP22NE10L is also equipped with an intrinsic diode, which provides body-drain diode reverse recovery performance that is beneficial in preventing reverse voltage spikes in inductive load switching.

In summary, the STP22NE10L from STMicroelectronics is a powerful and versatile N-Channel MOSFET that offers a combination of low on-resistance, high-speed switching, and thermal efficiency. Its robustness and reliability make it an excellent choice for designers looking to optimize their power management systems in both industrial and consumer electronics.

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