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STP24N60M6

Part No STP24N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220 / N-Channel 600 V 17A (Tj) 130W (Tc) Through Hole TO-220
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 100 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP24
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356520-STP24N60M6
Ultra Librarian 3D Model Ultra Librarian STP24N60M6 CAD Model

Description

The STP24N60M6 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, one of the leading manufacturers in semiconductor solutions. Designed with advanced MDmesh™ M6 technology, this power MOSFET offers outstanding performance in terms of efficiency and reliability, making it an ideal choice for a wide range of high-efficiency applications.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 600V, the STP24N60M6 can handle high voltage applications with ease, providing flexibility for designers.
  • Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)), minimizing conduction losses and improving overall efficiency in power conversion systems.
  • Fast Switching Performance: Its fast switching speed reduces switching losses, contributing to higher efficiency in applications such as switching power supplies and motor control.
  • Enhanced Power Density: The MDmesh™ M6 technology allows for increased power density, which is crucial for miniaturization of power supply units.
  • Improved Ruggedness: The MOSFET is designed to be rugged, with a high threshold for avalanche energy, ensuring durability and reliability under stress.

Applications

The versatile characteristics of the STP24N60M6 make it suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • High Efficiency DC-DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Electric Vehicle (EV) Charging Stations

Environmental and Quality Certifications

The STP24N60M6 is manufactured with the environment in mind, complying with various international standards, such as RoHS and REACH. Additionally, STMicroelectronics ensures that this product meets rigorous quality management standards, including ISO 9001 and ISO/TS 16949 for automotive industry quality management.

With its combination of high performance, efficiency, and reliability, the STP24N60M6 from STMicroelectronics represents a top-tier solution for engineers looking to optimize their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6979 $50.9370
75+ $1.3932 $104.4900
115+ $1.3497 $155.2155
155+ $1.3061 $202.4455
200+ $1.2626 $252.5200
270+ $1.1320 $305.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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