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STP25N60M2-EP

Part No STP25N60M2-EP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 600 V 18A (Tc) 150W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series MDmesh™ M2-EP
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898319-STP25N60M2-EP
Ultra Librarian 3D Model Ultra Librarian STP25N60M2-EP CAD Model

Description

STP25N60M2-EP - High-Performance Power MOSFET

The STP25N60M2-EP is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is engineered to meet the demanding requirements of high-efficiency power conversion and switching applications. With its robust design and advanced technology, the STP25N60M2-EP offers superior performance, making it an ideal choice for a wide range of electronic systems.

Key Features

  • High Voltage Capability: The STP25N60M2-EP is capable of supporting applications that require a high breakdown voltage, with a rating of up to 600V. This makes it suitable for high voltage power supplies, inverters, and other energy-intensive applications.
  • Low On-Resistance (R<sub>DS(on)): With an on-resistance as low as 0.190 Ω, this MOSFET ensures minimal conduction losses, leading to higher efficiency in power conversion.
  • High Current Handling: The device can handle continuous drain currents up to 20A, making it capable of driving high current loads with ease.
  • Fast Switching Performance: The fast switching characteristics of the STP25N60M2-EP reduce switching losses, contributing to the overall efficiency of the system.
  • Enhanced Durability: Built with STMicroelectronics' MDmesh™ II technology, it offers improved ruggedness and reliability, which is crucial for industrial and automotive applications.
  • Reduced Gate Charge (Q<sub>g): A lower gate charge enables faster switching speeds and reduces the energy required to turn the MOSFET on and off, further enhancing efficiency.

Applications

The versatility of the STP25N60M2-EP allows it to be used in a broad array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • LED Lighting
  • High-efficiency DC-AC inverters
  • Motor Control Systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STP25N60M2-EP is no exception, providing reliable performance even under harsh conditions. It is designed to meet the stringent requirements of the industrial and automotive markets, ensuring a long operational lifespan and consistent performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.5042 $52.0336
19+ $5.3368 $101.3992
30+ $5.1700 $155.1000
40+ $5.0033 $200.1320
52+ $4.8365 $251.4980
70+ $4.3362 $303.5340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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